Transport mechanism in amorphous molybdenum silicide thin films

Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured to reveal charge transport mechanism, which is of great importance applications but still insufficient. It found that Mott variable hopping conductivity dominates sputtered amorphous thin films. Additionally, observed crossover from negative positive ascribed interference enhancement shrinkage electron wave function, both vary probability between localized sites.